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APT35GP120B 1200V POWER MOS 7 IGBT The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. (R) TO-247 G C E * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient * 100 kHz operation @ 800V, 14A * 50 kHz operation @ 800V, 25A * RBSOA rated G C E All Ratings: TC = 25C unless otherwise specified. APT35GP120B UNIT 1200 20 30 96 46 140 140A @ 960V 543 -55 to 150 300 Watts C Amps Volts Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current 1 @ TC = 25C Reverse Bias Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT 1200 3 4.5 3.3 3 250 2 6 3.9 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) 2 I CES I GES A nA 6-2003 050-7406 Rev D Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) 2500 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT35GP120B Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 35A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 35A 4 MIN TYP MAX UNIT 3240 248 31 7.5 150 21 62 140 16 20 94 40 750 1305 680 16 20 147 75 750 2132 1744 J ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 5 6 R G = 5 TJ = +25C J Inductive Switching (125C) VCC = 600V VGE = 15V I C = 35A R G = 5 TJ = +125C Turn-on Switching Energy (Diode) Turn-off Switching Energy 6 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm .23 N/A 5.90 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 6-2003 050-7406 Rev D TYPICAL PERFORMANCE CURVES 80 70 IC, COLLECTOR CURRENT (A) VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE APT35GP120B 80 70 IC, COLLECTOR CURRENT (A) VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE 60 50 40 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 120 TC=25C TC=125C 60 50 40 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (VGE = 10V) 16 TC=125C TC=25C VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST <0.5 % DUTY CYCLE IC, COLLECTOR CURRENT (A) 100 14 12 10 8 6 4 2 0 0 IC = 35A TJ = 25C VCE= 240V VCE= 600V VCE= 960V 80 60 TJ = 25C TJ = 125C 20 0 0 1 TJ = -55C 23 456 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 40 20 40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 6 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 5 IC= 70A IC=70A IC= 35A 4 IC= 35A 3 2 1 0 IC=17.5A IC= 17.5A 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2 6 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 140 0 0 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) IC, DC COLLECTOR CURRENT(A) 1.15 1.1 1.05 1.0 0.95 0.90 0.85 0.8 -50 120 100 80 60 40 20 0 -50 6-2003 050-7406 Rev D -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature APT35GP120B 35 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 180 160 140 120 100 80 60 40 VCE = 600V 20 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100 90 80 TJ = 125C, VGE = 10V or 15V RG = 5 L = 100 H VGE =10V,TJ=25C VGE =10V,TJ=125C VGE =15V,TJ=25C VGE =15V,TJ=125C 30 VGE= 10V 25 20 15 10 5 VCE = 600V TJ = 25C, TJ =125C RG = 5 L = 100 H VGE= 15V 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 140 RG = 5, L = 100H, VCE = 600V 120 100 80 60 40 20 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 5000 EON2, TURN ON ENERGY LOSS (J) TJ=125C,VGE=15V TJ = 25 or 125C,VGE =10V TJ = 25 or125C,VGE = 10V tr, RISE TIME (ns) tf, FALL TIME (ns) 70 60 50 40 30 20 10 0 RG = 5, L = 100H, VCE = 600V TJ = 25C, VGE = 10V or 15V 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 4000 EOFF, TURN OFF ENERGY LOSS (J) VCE = 600V RG = 5 VCE = 600V RG = 5 4000 TJ=125C,VGE=10V 3000 TJ = 125C, VGE = 10V or 15V 3000 2000 2000 TJ= 25C,VGE=15V 1000 TJ = 25C, VGE = 10V or 15V 1000 TJ= 25C,VGE=10V 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) VCE = 600V VGE = +15V TJ = 125C 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 5000 SWITCHING ENERGY LOSSES (J) VCE = 600V VGE = +15V RG = 5 0 7000 6000 5000 4000 3000 2000 Eon2 70A Eon2 70A 4000 3000 Eoff70A Eon2 35A 2000 Eon2 17.5A Eoff 35A Eoff 17.5A 0 Eoff 70A 6-2003 Eon2 35A Eon2 17.5A Eoff 35A Eoff 17.5A 1000 Rev D 1000 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 0 050-7406 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES 10,000 5,000 C, CAPACITANCE ( F) APT35GP120B 160 Cies IC, COLLECTOR CURRENT (A) 140 120 P 1,000 500 Coes 100 50 Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100 80 60 40 20 0 0 100 200 300 400 500 600 700 800 900 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Reverse Bias Safe Operating Area 0.25 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0.05 0 10-5 10-4 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC ZJC, THERMAL IMPEDANCE (C/W) 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 180 FMAX, OPERATING FREQUENCY (kHz) RC MODEL Junction temp. ( "C) 0.0896 Power (Watts) 0.140 Case temperature 0.228F 0.0108F 100 50 Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off 10 7 TJ = 125C TC = 75C D = 50 % VCE = 800V RG = 5 TJ - TC R JC FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 050-7406 Rev D 6-2003 APT35GP120B APT30DF120 Gate Voltage 10% t d(on) TJ = 125 C V CC IC V CE tr 90% Collector Current 5% 10% 5% Collector Voltage A D.U.T. Switching Energy Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 90% VTEST t d(off) 90% *DRIVER SAME TYPE AS D.U.T. Gate Voltage T J = 125 C tf Collector Voltage A V CE IC 10% 0 Collector Current 100uH V CLAMP B Switching Energy A DRIVER* D.U.T. Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit T0-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 6-2003 Gate Collector Emitter Rev D 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7406 |
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